Solution-Processed Multiferroic Thin-Films with Large Magnetoelectric Coupling at Room-Temperature.

Experimental realization of thin films with a significant room-temperature magnetoelectric coupling coefficient, αME, in the absence of an external DC magnetic field, has been thus far elusive. Here, a large coupling coefficient of 750 ± 30 mV Oe-1 cm-1 is reported for multiferroic polymer nanocomposites (MPCs) thin-films in the absence of an external DC magnetic field. The MPCs are based on PMMA-grafted cobalt-ferrite nanoparticles uniformly dispersed in the piezoelectric polymer poly(vinylidene fluoride-co-trifluoroethylene, P(VDF-TrFE). It is shown that nanoparticle agglomeration plays a detrimental role and significantly reduces αME. Surface functionalization of the nanoparticles by grafting a layer of poly(methyl methacrylate) (PMMA) via atom transfer radical polymerization (ATRP) renders the nanoparticle miscible with P(VDF-TRFE) matrix, thus enabling their uniform dispersion in the matrix even in submicrometer thin films. Uniform dispersion yields maximized interfacial interactions between the ferromagnetic nanoparticles and the piezoelectric polymer matrix leading to the experimental demonstration of large αME values in solution-processed thin films, which can be exploited in flexible and printable multiferroic electronic devices for sensing and memory applications.

Solution-processed transparent ferroelectric nylon thin films.

Ferroelectricity, a bistable ordering of electrical dipoles in a material, is widely used in sensors, actuators, nonlinear optics, and data storage. Traditional ferroelectrics are ceramic based. Ferroelectric polymers are inexpensive lead-free materials that offer unique features such as the freedom of design enabled by chemistry, the facile solution-based low-temperature processing, and mechanical flexibility. Among engineering polymers, odd nylons are ferroelectric. Since the discovery of ferroelectricity in polymers, nearly half a century ago, a solution-processed ferroelectric nylon thin film has not been demonstrated because of the strong tendency of nylon chains to form hydrogen bonds. We show the solution processing of transparent ferroelectric thin film capacitors of odd nylons. The demonstration of ferroelectricity, as well as the way to obtain thin films, makes odd nylons attractive for applications in flexible devices, soft robotics, biomedical devices, and electronic textiles.

Optimizing the Binding Energy of the Surfactant to Iron Oxide Yields Truly Monodisperse Nanoparticles.

Despite the great progress in the synthesis of iron oxide nanoparticles (NPs) using a thermal decomposition method, the production of NPs with low polydispersity index is still challenging. In a thermal decomposition synthesis, oleic acid (OAC) and oleylamine (OAM) are used as surfactants. The surfactants bind to the growth species, thereby controlling the reaction kinetics and hence playing a critical role in the final size and size distribution of the NPs. Finding an optimum molar ratio between the surfactants oleic OAC/OAM is therefore crucial. A systematic experimental and theoretical study, however, on the role of the surfactant ratio is still missing. Here, we present a detailed experimental study on the role of the surfactant ratio in size distribution. We found an optimum OAC/OAM ratio of 3 at which the synthesis yielded truly monodisperse (polydispersity less than 7%) iron oxide NPs without employing any post synthesis size-selective procedures. We performed molecular dynamics simulations and showed that the binding energy of oleate to the NP is maximized at an OAC/OAM ratio of 3. The optimum OAC/OAM ratio of 3 is allowed for the control of the NP size with nanometer precision by simply changing the reaction heating rate. The optimum OAC/OAM ratio has no influence on the crystallinity and the superparamagnetic behavior of the Fe3O4 NPs and therefore can be adopted for the scaled-up production of size-controlled monodisperse Fe3O4 NPs.

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes.

Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm-2.